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Germanium-Tin (GeSn) Metal-Semiconductor-Metal (MSM) Near-Infrared Photodetectors
Narrow-bandgap germanium–tin (GeSn) is employed to fabricate metal–semiconductor–metal (MSM) near-infrared photodetectors with low-dark currents and high responsivity. To reduce the dark current, the SiO(2) layer is inserted in between the metal and semiconductor to increase the barrier height, albe...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607407/ https://www.ncbi.nlm.nih.gov/pubmed/36296088 http://dx.doi.org/10.3390/mi13101733 |