TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of the parasitic body diode and imp...

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Detalles Bibliográficos
Autores principales: Wang, Ruoyu, Guo, Jingwei, Liu, Chang, Wu, Hao, Huang, Zhiyong, Hu, Shengdong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607645/
https://www.ncbi.nlm.nih.gov/pubmed/36296094
http://dx.doi.org/10.3390/mi13101741

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607645/
https://www.ncbi.nlm.nih.gov/pubmed/36296094
http://dx.doi.org/10.3390/mi13101741

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