TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of the parasitic body diode and imp...

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Autores principales: Wang, Ruoyu, Guo, Jingwei, Liu, Chang, Wu, Hao, Huang, Zhiyong, Hu, Shengdong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607645/
https://www.ncbi.nlm.nih.gov/pubmed/36296094
http://dx.doi.org/10.3390/mi13101741
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author Wang, Ruoyu
Guo, Jingwei
Liu, Chang
Wu, Hao
Huang, Zhiyong
Hu, Shengdong
author_facet Wang, Ruoyu
Guo, Jingwei
Liu, Chang
Wu, Hao
Huang, Zhiyong
Hu, Shengdong
author_sort Wang, Ruoyu
collection PubMed
description In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of the parasitic body diode and improves the performance in the third quadrant. CSLs with different doping concentrations help to lower the on-state resistance as well as the gate-drain capacitance. As a result, the on-state resistance is decreased by 47.82% while the breakdown voltage remains the same and the turn-on and turn-off losses of the proposed structure are reduced by 83.39% and 68.18% respectively, compared to the conventional structure.
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spelling pubmed-96076452022-10-28 TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode Wang, Ruoyu Guo, Jingwei Liu, Chang Wu, Hao Huang, Zhiyong Hu, Shengdong Micromachines (Basel) Article In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of the parasitic body diode and improves the performance in the third quadrant. CSLs with different doping concentrations help to lower the on-state resistance as well as the gate-drain capacitance. As a result, the on-state resistance is decreased by 47.82% while the breakdown voltage remains the same and the turn-on and turn-off losses of the proposed structure are reduced by 83.39% and 68.18% respectively, compared to the conventional structure. MDPI 2022-10-14 /pmc/articles/PMC9607645/ /pubmed/36296094 http://dx.doi.org/10.3390/mi13101741 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Ruoyu
Guo, Jingwei
Liu, Chang
Wu, Hao
Huang, Zhiyong
Hu, Shengdong
TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode
title TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode
title_full TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode
title_fullStr TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode
title_full_unstemmed TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode
title_short TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode
title_sort tcad-based investigation of a 650 v 4h-sic trench mosfet with a hetero-junction body diode
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607645/
https://www.ncbi.nlm.nih.gov/pubmed/36296094
http://dx.doi.org/10.3390/mi13101741
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