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TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode
In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of the parasitic body diode and imp...
Autores principales: | Wang, Ruoyu, Guo, Jingwei, Liu, Chang, Wu, Hao, Huang, Zhiyong, Hu, Shengdong |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9607645/ https://www.ncbi.nlm.nih.gov/pubmed/36296094 http://dx.doi.org/10.3390/mi13101741 |
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