A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

A novel vertical dual surrounding gate transistor with embedded oxide layer is proposed for capacitorless single transistor DRAM (1T DRAM). The embedded oxide layer is innovatively used to improve the retention time by reducing the recombination rate of stored holes and sensing electrons. Based on T...

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Detalles Bibliográficos
Autores principales: Zhao, Dongxue, Xia, Zhiliang, Yang, Tao, Yang, Yuancheng, Zhou, Wenxi, Huo, Zongliang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9608245/
https://www.ncbi.nlm.nih.gov/pubmed/36296125
http://dx.doi.org/10.3390/mi13101772
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author Zhao, Dongxue
Xia, Zhiliang
Yang, Tao
Yang, Yuancheng
Zhou, Wenxi
Huo, Zongliang
author_facet Zhao, Dongxue
Xia, Zhiliang
Yang, Tao
Yang, Yuancheng
Zhou, Wenxi
Huo, Zongliang
author_sort Zhao, Dongxue
collection PubMed
description A novel vertical dual surrounding gate transistor with embedded oxide layer is proposed for capacitorless single transistor DRAM (1T DRAM). The embedded oxide layer is innovatively used to improve the retention time by reducing the recombination rate of stored holes and sensing electrons. Based on TCAD simulations, the new structure is predicted to not only have the characteristics of fast access, random read and integration of 4F(2) cell, but also to realize good retention and deep scaling. At the same time, the new structure has the potential of scaling compared with the conventional capacitorless 1T DRAM.
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spelling pubmed-96082452022-10-28 A Novel Capacitorless 1T DRAM with Embedded Oxide Layer Zhao, Dongxue Xia, Zhiliang Yang, Tao Yang, Yuancheng Zhou, Wenxi Huo, Zongliang Micromachines (Basel) Article A novel vertical dual surrounding gate transistor with embedded oxide layer is proposed for capacitorless single transistor DRAM (1T DRAM). The embedded oxide layer is innovatively used to improve the retention time by reducing the recombination rate of stored holes and sensing electrons. Based on TCAD simulations, the new structure is predicted to not only have the characteristics of fast access, random read and integration of 4F(2) cell, but also to realize good retention and deep scaling. At the same time, the new structure has the potential of scaling compared with the conventional capacitorless 1T DRAM. MDPI 2022-10-19 /pmc/articles/PMC9608245/ /pubmed/36296125 http://dx.doi.org/10.3390/mi13101772 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhao, Dongxue
Xia, Zhiliang
Yang, Tao
Yang, Yuancheng
Zhou, Wenxi
Huo, Zongliang
A Novel Capacitorless 1T DRAM with Embedded Oxide Layer
title A Novel Capacitorless 1T DRAM with Embedded Oxide Layer
title_full A Novel Capacitorless 1T DRAM with Embedded Oxide Layer
title_fullStr A Novel Capacitorless 1T DRAM with Embedded Oxide Layer
title_full_unstemmed A Novel Capacitorless 1T DRAM with Embedded Oxide Layer
title_short A Novel Capacitorless 1T DRAM with Embedded Oxide Layer
title_sort novel capacitorless 1t dram with embedded oxide layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9608245/
https://www.ncbi.nlm.nih.gov/pubmed/36296125
http://dx.doi.org/10.3390/mi13101772
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