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A Novel Capacitorless 1T DRAM with Embedded Oxide Layer
A novel vertical dual surrounding gate transistor with embedded oxide layer is proposed for capacitorless single transistor DRAM (1T DRAM). The embedded oxide layer is innovatively used to improve the retention time by reducing the recombination rate of stored holes and sensing electrons. Based on T...
Autores principales: | Zhao, Dongxue, Xia, Zhiliang, Yang, Tao, Yang, Yuancheng, Zhou, Wenxi, Huo, Zongliang |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9608245/ https://www.ncbi.nlm.nih.gov/pubmed/36296125 http://dx.doi.org/10.3390/mi13101772 |
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