A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor

A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one FBFET, and each transistor is located on the t...

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Detalles Bibliográficos
Autores principales: Oh, Jong Hyeok, Yu, Yun Seop
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9608702/
https://www.ncbi.nlm.nih.gov/pubmed/36295978
http://dx.doi.org/10.3390/mi13101625

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9608702/
https://www.ncbi.nlm.nih.gov/pubmed/36295978
http://dx.doi.org/10.3390/mi13101625

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