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A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor
A monolithic three-dimensional integrated static random access memory containing a feedback field effect transistor (M3D-FBFET-SRAM) was proposed. The M3D-FBFET-SRAM cell consists of one metal oxide semiconductor field effect transistor (MOSFET) and one FBFET, and each transistor is located on the t...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9608702/ https://www.ncbi.nlm.nih.gov/pubmed/36295978 http://dx.doi.org/10.3390/mi13101625 |