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Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure
[Image: see text] We report the influence of thickness of an undoped GaN (u-GaN) layer on current transport to a 2DHG through the metal/p++GaN contact in a GaN/AlGaN/GaN heterostructure. The current is dominated by an internal potential barrier of 0.2–0.27 eV at the p+ GaN/u-GaN, which increases wit...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9609307/ https://www.ncbi.nlm.nih.gov/pubmed/36311441 http://dx.doi.org/10.1021/acsaelm.2c01138 |