Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials

For ultra-scaled technology nodes at channel lengths below 12 nm, two-dimensional (2D) materials are a potential replacement for silicon since even atomically thin 2D semiconductors can maintain sizable mobilities and provide enhanced gate control in a stacked channel nanosheet transistor geometry....

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Detalles Bibliográficos
Autores principales: Knobloch, Theresia, Selberherr, Siegfried, Grasser, Tibor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9609734/
https://www.ncbi.nlm.nih.gov/pubmed/36296740
http://dx.doi.org/10.3390/nano12203548

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9609734/
https://www.ncbi.nlm.nih.gov/pubmed/36296740
http://dx.doi.org/10.3390/nano12203548

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