Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET)

We have demonstrated the method of threshold voltage (V(T)) adjustment by controlling Ge content in the SiGe p-channel of N1 complementary field-effect transistor (CFET) for conquering the work function metal (WFM) filling issue on highly scaled MOSFET. Single WFM shared gate N1 CFET was used to stu...

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Detalles Bibliográficos
Autores principales: Sun, Chong-Jhe, Wu, Chen-Han, Yao, Yi-Ju, Lin, Shan-Wen, Yan, Siao-Cheng, Lin, Yi-Wen, Wu, Yung-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9610062/
https://www.ncbi.nlm.nih.gov/pubmed/36296902
http://dx.doi.org/10.3390/nano12203712

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9610062/
https://www.ncbi.nlm.nih.gov/pubmed/36296902
http://dx.doi.org/10.3390/nano12203712

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