High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display

In this work, a promising dual-gated thin film transistor (TFT) structure has been proposed and introduced in the shift register (SR)-integrated circuits to reduce the rising time. The threshold voltage can be simultaneously changed by the top gate and the bottom gate in the proposed dual-gated TFTs...

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Detalles Bibliográficos
Autores principales: Song, Rong, Wu, Yonghe, Lin, Chengkai, Liu, Kai, Qing, Zhenjun, Li, Yingxiang, Xue, Yan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9610482/
https://www.ncbi.nlm.nih.gov/pubmed/36296049
http://dx.doi.org/10.3390/mi13101696

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9610482/
https://www.ncbi.nlm.nih.gov/pubmed/36296049
http://dx.doi.org/10.3390/mi13101696

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