Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics

The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes. We propose a new approach to investigate the degradation of s...

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Detalles Bibliográficos
Autores principales: Teplov, Georgy, Zhevnenko, Dmitry, Meshchaninov, Fedor, Kozhevnikov, Vladislav, Sattarov, Pavel, Kuznetsov, Sergey, Magomedrasulov, Alikhan, Telminov, Oleg, Gornev, Evgeny
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9610922/
https://www.ncbi.nlm.nih.gov/pubmed/36296044
http://dx.doi.org/10.3390/mi13101691

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9610922/
https://www.ncbi.nlm.nih.gov/pubmed/36296044
http://dx.doi.org/10.3390/mi13101691

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