Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO(2)/p(+)-Si Memristors

In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO(2)/p(+)-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxid...

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Detalles Bibliográficos
Autores principales: Kim, Donguk, Lee, Hee Jun, Yang, Tae Jun, Choi, Woo Sik, Kim, Changwook, Choi, Sung-Jin, Bae, Jong-Ho, Kim, Dong Myong, Kim, Sungjun, Kim, Dae Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9610976/
https://www.ncbi.nlm.nih.gov/pubmed/36296772
http://dx.doi.org/10.3390/nano12203582

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9610976/
https://www.ncbi.nlm.nih.gov/pubmed/36296772
http://dx.doi.org/10.3390/nano12203582

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