Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidan...

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Detalles Bibliográficos
Autores principales: Hsieh, Chi-Hsiang, Chang, Che-Yuan, Hsiao, Yi-Kai, Chen, Chao-Chang A., Tu, Chang-Ching, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9611252/
https://www.ncbi.nlm.nih.gov/pubmed/36296105
http://dx.doi.org/10.3390/mi13101752

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9611252/
https://www.ncbi.nlm.nih.gov/pubmed/36296105
http://dx.doi.org/10.3390/mi13101752

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