Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm

With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electron...

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Detalles Bibliográficos
Autores principales: Zhang, Hewei, Tian, Yang, Li, Qian, Ding, Wenqiang, Yu, Xuzhen, Lin, Zebiao, Feng, Xuyang, Zhao, Yanli
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9611821/
https://www.ncbi.nlm.nih.gov/pubmed/36298075
http://dx.doi.org/10.3390/s22207724

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9611821/
https://www.ncbi.nlm.nih.gov/pubmed/36298075
http://dx.doi.org/10.3390/s22207724

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