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Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm

With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electron...

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Detalles Bibliográficos
Autores principales: Zhang, Hewei, Tian, Yang, Li, Qian, Ding, Wenqiang, Yu, Xuzhen, Lin, Zebiao, Feng, Xuyang, Zhao, Yanli
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9611821/
https://www.ncbi.nlm.nih.gov/pubmed/36298075
http://dx.doi.org/10.3390/s22207724
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author Zhang, Hewei
Tian, Yang
Li, Qian
Ding, Wenqiang
Yu, Xuzhen
Lin, Zebiao
Feng, Xuyang
Zhao, Yanli
author_facet Zhang, Hewei
Tian, Yang
Li, Qian
Ding, Wenqiang
Yu, Xuzhen
Lin, Zebiao
Feng, Xuyang
Zhao, Yanli
author_sort Zhang, Hewei
collection PubMed
description With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electronics on silicon substrate chips is crucial to driving cost reduction and performance improvement; thus, the technical research on InGaAs/Si APD is of great significance. This work is the first to demonstrate the use of a photon-trapping (PT) structure to improve the performance of the InGaAs/Si APD based on an SOI substrate, which exhibits very high absorption efficiency at 1310 nm wavelength while the thickness of the absorption layer is kept at 800 nm. Based on the optical and electrical simulations, an optimized InGaAs/Si PT-APD is proposed, which exhibits a better performance and a higher responsivity compared to the original InGaAs/Si APD.
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spelling pubmed-96118212022-10-28 Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm Zhang, Hewei Tian, Yang Li, Qian Ding, Wenqiang Yu, Xuzhen Lin, Zebiao Feng, Xuyang Zhao, Yanli Sensors (Basel) Article With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electronics on silicon substrate chips is crucial to driving cost reduction and performance improvement; thus, the technical research on InGaAs/Si APD is of great significance. This work is the first to demonstrate the use of a photon-trapping (PT) structure to improve the performance of the InGaAs/Si APD based on an SOI substrate, which exhibits very high absorption efficiency at 1310 nm wavelength while the thickness of the absorption layer is kept at 800 nm. Based on the optical and electrical simulations, an optimized InGaAs/Si PT-APD is proposed, which exhibits a better performance and a higher responsivity compared to the original InGaAs/Si APD. MDPI 2022-10-12 /pmc/articles/PMC9611821/ /pubmed/36298075 http://dx.doi.org/10.3390/s22207724 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhang, Hewei
Tian, Yang
Li, Qian
Ding, Wenqiang
Yu, Xuzhen
Lin, Zebiao
Feng, Xuyang
Zhao, Yanli
Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm
title Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm
title_full Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm
title_fullStr Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm
title_full_unstemmed Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm
title_short Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm
title_sort photon-trapping microstructure for ingaas/si avalanche photodiodes operating at 1.31 μm
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9611821/
https://www.ncbi.nlm.nih.gov/pubmed/36298075
http://dx.doi.org/10.3390/s22207724
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