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Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm
With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electron...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9611821/ https://www.ncbi.nlm.nih.gov/pubmed/36298075 http://dx.doi.org/10.3390/s22207724 |
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author | Zhang, Hewei Tian, Yang Li, Qian Ding, Wenqiang Yu, Xuzhen Lin, Zebiao Feng, Xuyang Zhao, Yanli |
author_facet | Zhang, Hewei Tian, Yang Li, Qian Ding, Wenqiang Yu, Xuzhen Lin, Zebiao Feng, Xuyang Zhao, Yanli |
author_sort | Zhang, Hewei |
collection | PubMed |
description | With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electronics on silicon substrate chips is crucial to driving cost reduction and performance improvement; thus, the technical research on InGaAs/Si APD is of great significance. This work is the first to demonstrate the use of a photon-trapping (PT) structure to improve the performance of the InGaAs/Si APD based on an SOI substrate, which exhibits very high absorption efficiency at 1310 nm wavelength while the thickness of the absorption layer is kept at 800 nm. Based on the optical and electrical simulations, an optimized InGaAs/Si PT-APD is proposed, which exhibits a better performance and a higher responsivity compared to the original InGaAs/Si APD. |
format | Online Article Text |
id | pubmed-9611821 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-96118212022-10-28 Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm Zhang, Hewei Tian, Yang Li, Qian Ding, Wenqiang Yu, Xuzhen Lin, Zebiao Feng, Xuyang Zhao, Yanli Sensors (Basel) Article With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of optical components and signal processing electronics on silicon substrate chips is crucial to driving cost reduction and performance improvement; thus, the technical research on InGaAs/Si APD is of great significance. This work is the first to demonstrate the use of a photon-trapping (PT) structure to improve the performance of the InGaAs/Si APD based on an SOI substrate, which exhibits very high absorption efficiency at 1310 nm wavelength while the thickness of the absorption layer is kept at 800 nm. Based on the optical and electrical simulations, an optimized InGaAs/Si PT-APD is proposed, which exhibits a better performance and a higher responsivity compared to the original InGaAs/Si APD. MDPI 2022-10-12 /pmc/articles/PMC9611821/ /pubmed/36298075 http://dx.doi.org/10.3390/s22207724 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Zhang, Hewei Tian, Yang Li, Qian Ding, Wenqiang Yu, Xuzhen Lin, Zebiao Feng, Xuyang Zhao, Yanli Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm |
title | Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm |
title_full | Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm |
title_fullStr | Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm |
title_full_unstemmed | Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm |
title_short | Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm |
title_sort | photon-trapping microstructure for ingaas/si avalanche photodiodes operating at 1.31 μm |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9611821/ https://www.ncbi.nlm.nih.gov/pubmed/36298075 http://dx.doi.org/10.3390/s22207724 |
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