Comparison of the Material Quality of Al(x)In(1−x)N (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering

Al(x)In(1−x)N ternary semiconductors have attracted much interest for application in photovoltaic devices. Here, we compare the material quality of Al(x)In(1−x)N layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate the...

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Detalles Bibliográficos
Autores principales: Sun, Michael, Blasco, Rodrigo, Nwodo, Julian, de la Mata, María, Molina, Sergio I., Ajay, Akhil, Monroy, Eva, Valdueza-Felip, Sirona, Naranjo, Fernando B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9612173/
https://www.ncbi.nlm.nih.gov/pubmed/36295439
http://dx.doi.org/10.3390/ma15207373

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9612173/
https://www.ncbi.nlm.nih.gov/pubmed/36295439
http://dx.doi.org/10.3390/ma15207373

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