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Comparison of the Material Quality of Al(x)In(1−x)N (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering
Al(x)In(1−x)N ternary semiconductors have attracted much interest for application in photovoltaic devices. Here, we compare the material quality of Al(x)In(1−x)N layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate the...
Autores principales: | Sun, Michael, Blasco, Rodrigo, Nwodo, Julian, de la Mata, María, Molina, Sergio I., Ajay, Akhil, Monroy, Eva, Valdueza-Felip, Sirona, Naranjo, Fernando B. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9612173/ https://www.ncbi.nlm.nih.gov/pubmed/36295439 http://dx.doi.org/10.3390/ma15207373 |
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