Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used th...

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Detalles Bibliográficos
Autores principales: Du, Yong, Wei, Wenqi, Xu, Buqing, Wang, Guilei, Li, Ben, Miao, Yuanhao, Zhao, Xuewei, Kong, Zhenzhen, Lin, Hongxiao, Yu, Jiahan, Su, Jiale, Dong, Yan, Wang, Wenwu, Ye, Tianchun, Zhang, Jianjun, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9612311/
https://www.ncbi.nlm.nih.gov/pubmed/36295932
http://dx.doi.org/10.3390/mi13101579

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9612311/
https://www.ncbi.nlm.nih.gov/pubmed/36295932
http://dx.doi.org/10.3390/mi13101579

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