Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In(2)O(3)) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse serves...

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Detalles Bibliográficos
Autores principales: Zha, Chaofei, Luo, Wei, Zhang, Xia, Yan, Xin, Ren, Xiaomin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9613821/
https://www.ncbi.nlm.nih.gov/pubmed/36301382
http://dx.doi.org/10.1186/s11671-022-03740-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9613821/
https://www.ncbi.nlm.nih.gov/pubmed/36301382
http://dx.doi.org/10.1186/s11671-022-03740-1

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