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Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In(2)O(3)) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse serves...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9613821/ https://www.ncbi.nlm.nih.gov/pubmed/36301382 http://dx.doi.org/10.1186/s11671-022-03740-1 |
Sumario: | In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In(2)O(3)) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse serves as stimuli of the presynaptic membrane, and the drain current and channel conductance are treated as post-synaptic current and weights of the postsynaptic membrane, respectively. At low gate voltages, the device simulates synaptic behaviors including short-term depression and long-term depression. By increasing the amplitude and quantity of gate voltage pulses, the transition from short-term depression to long-term potentiation can be achieved. The device exhibits a large memory window of over 1 V and a minimal energy consumption of 12.5 pJ per synaptic event. This work may pave the way for the development of miniaturized low-consumption synaptic devices and related neuromorphic systems. |
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