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Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In(2)O(3)) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse serves...

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Detalles Bibliográficos
Autores principales: Zha, Chaofei, Luo, Wei, Zhang, Xia, Yan, Xin, Ren, Xiaomin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9613821/
https://www.ncbi.nlm.nih.gov/pubmed/36301382
http://dx.doi.org/10.1186/s11671-022-03740-1
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author Zha, Chaofei
Luo, Wei
Zhang, Xia
Yan, Xin
Ren, Xiaomin
author_facet Zha, Chaofei
Luo, Wei
Zhang, Xia
Yan, Xin
Ren, Xiaomin
author_sort Zha, Chaofei
collection PubMed
description In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In(2)O(3)) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse serves as stimuli of the presynaptic membrane, and the drain current and channel conductance are treated as post-synaptic current and weights of the postsynaptic membrane, respectively. At low gate voltages, the device simulates synaptic behaviors including short-term depression and long-term depression. By increasing the amplitude and quantity of gate voltage pulses, the transition from short-term depression to long-term potentiation can be achieved. The device exhibits a large memory window of over 1 V and a minimal energy consumption of 12.5 pJ per synaptic event. This work may pave the way for the development of miniaturized low-consumption synaptic devices and related neuromorphic systems.
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spelling pubmed-96138212022-10-29 Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors Zha, Chaofei Luo, Wei Zhang, Xia Yan, Xin Ren, Xiaomin Nanoscale Res Lett Research In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In(2)O(3)) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse serves as stimuli of the presynaptic membrane, and the drain current and channel conductance are treated as post-synaptic current and weights of the postsynaptic membrane, respectively. At low gate voltages, the device simulates synaptic behaviors including short-term depression and long-term depression. By increasing the amplitude and quantity of gate voltage pulses, the transition from short-term depression to long-term potentiation can be achieved. The device exhibits a large memory window of over 1 V and a minimal energy consumption of 12.5 pJ per synaptic event. This work may pave the way for the development of miniaturized low-consumption synaptic devices and related neuromorphic systems. Springer US 2022-10-27 /pmc/articles/PMC9613821/ /pubmed/36301382 http://dx.doi.org/10.1186/s11671-022-03740-1 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Research
Zha, Chaofei
Luo, Wei
Zhang, Xia
Yan, Xin
Ren, Xiaomin
Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
title Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
title_full Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
title_fullStr Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
title_full_unstemmed Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
title_short Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
title_sort low-consumption synaptic devices based on gate-all-around inas nanowire field-effect transistors
topic Research
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9613821/
https://www.ncbi.nlm.nih.gov/pubmed/36301382
http://dx.doi.org/10.1186/s11671-022-03740-1
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