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Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In(2)O(3)) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse serves...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9613821/ https://www.ncbi.nlm.nih.gov/pubmed/36301382 http://dx.doi.org/10.1186/s11671-022-03740-1 |