Analog and RF performance optimization for gate all around tunnel FET using broken-gap material

Many times, the fabricated cylindrical gate-all-around tunnel FET (GAA TFET) has an uneven radius due to several etching and deposition processes involved while fabricating the device, which show notable variations in the performance of the device. In this report, III–V uneven GAA TFET is studied by...

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Detalles Bibliográficos
Autores principales: Kumar, Pankaj, Koley, Kalyan, Mech, Bhubon C., Maurya, Ashish, Kumar, Subindu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9617921/
https://www.ncbi.nlm.nih.gov/pubmed/36309529
http://dx.doi.org/10.1038/s41598-022-22485-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9617921/
https://www.ncbi.nlm.nih.gov/pubmed/36309529
http://dx.doi.org/10.1038/s41598-022-22485-6

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