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Mixed-Substituted Single-Source Precursors for Si(1–x)Ge(x) Thin Film Deposition
[Image: see text] A series of new mixed-substituted heteronuclear precursors with preformed Si–Ge bonds has been synthesized via a two-step synthesis protocol. The molecular sources combine convenient handling with sufficient thermal lability to provide access to group IV alloys with low carbon cont...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9627566/ https://www.ncbi.nlm.nih.gov/pubmed/36260357 http://dx.doi.org/10.1021/acs.inorgchem.2c02835 |
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author | Köstler, Benedikt Jungwirth, Felix Achenbach, Luisa Sistani, Masiar Bolte, Michael Lerner, Hans-Wolfram Albert, Philipp Wagner, Matthias Barth, Sven |
author_facet | Köstler, Benedikt Jungwirth, Felix Achenbach, Luisa Sistani, Masiar Bolte, Michael Lerner, Hans-Wolfram Albert, Philipp Wagner, Matthias Barth, Sven |
author_sort | Köstler, Benedikt |
collection | PubMed |
description | [Image: see text] A series of new mixed-substituted heteronuclear precursors with preformed Si–Ge bonds has been synthesized via a two-step synthesis protocol. The molecular sources combine convenient handling with sufficient thermal lability to provide access to group IV alloys with low carbon content. Differences in the molecule–material conversion by chemical vapor deposition (CVD) techniques are described and traced back to the molecular design. This study illustrates the possibility of tailoring the physical and chemical properties of single-source precursors for their application in the CVD of Si(1–x)Ge(x) coatings. Moreover, partial crystallization of the Si(1–x)Ge(x) has been achieved by Ga metal-supported CVD growth, which demonstrated the potential of the presented precursor class for the synthesis of crystalline group IV alloys. |
format | Online Article Text |
id | pubmed-9627566 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-96275662022-11-03 Mixed-Substituted Single-Source Precursors for Si(1–x)Ge(x) Thin Film Deposition Köstler, Benedikt Jungwirth, Felix Achenbach, Luisa Sistani, Masiar Bolte, Michael Lerner, Hans-Wolfram Albert, Philipp Wagner, Matthias Barth, Sven Inorg Chem [Image: see text] A series of new mixed-substituted heteronuclear precursors with preformed Si–Ge bonds has been synthesized via a two-step synthesis protocol. The molecular sources combine convenient handling with sufficient thermal lability to provide access to group IV alloys with low carbon content. Differences in the molecule–material conversion by chemical vapor deposition (CVD) techniques are described and traced back to the molecular design. This study illustrates the possibility of tailoring the physical and chemical properties of single-source precursors for their application in the CVD of Si(1–x)Ge(x) coatings. Moreover, partial crystallization of the Si(1–x)Ge(x) has been achieved by Ga metal-supported CVD growth, which demonstrated the potential of the presented precursor class for the synthesis of crystalline group IV alloys. American Chemical Society 2022-10-19 2022-10-31 /pmc/articles/PMC9627566/ /pubmed/36260357 http://dx.doi.org/10.1021/acs.inorgchem.2c02835 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Köstler, Benedikt Jungwirth, Felix Achenbach, Luisa Sistani, Masiar Bolte, Michael Lerner, Hans-Wolfram Albert, Philipp Wagner, Matthias Barth, Sven Mixed-Substituted Single-Source Precursors for Si(1–x)Ge(x) Thin Film Deposition |
title | Mixed-Substituted
Single-Source Precursors for Si(1–x)Ge(x) Thin
Film Deposition |
title_full | Mixed-Substituted
Single-Source Precursors for Si(1–x)Ge(x) Thin
Film Deposition |
title_fullStr | Mixed-Substituted
Single-Source Precursors for Si(1–x)Ge(x) Thin
Film Deposition |
title_full_unstemmed | Mixed-Substituted
Single-Source Precursors for Si(1–x)Ge(x) Thin
Film Deposition |
title_short | Mixed-Substituted
Single-Source Precursors for Si(1–x)Ge(x) Thin
Film Deposition |
title_sort | mixed-substituted
single-source precursors for si(1–x)ge(x) thin
film deposition |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9627566/ https://www.ncbi.nlm.nih.gov/pubmed/36260357 http://dx.doi.org/10.1021/acs.inorgchem.2c02835 |
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