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Mixed-Substituted Single-Source Precursors for Si(1–x)Ge(x) Thin Film Deposition

[Image: see text] A series of new mixed-substituted heteronuclear precursors with preformed Si–Ge bonds has been synthesized via a two-step synthesis protocol. The molecular sources combine convenient handling with sufficient thermal lability to provide access to group IV alloys with low carbon cont...

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Autores principales: Köstler, Benedikt, Jungwirth, Felix, Achenbach, Luisa, Sistani, Masiar, Bolte, Michael, Lerner, Hans-Wolfram, Albert, Philipp, Wagner, Matthias, Barth, Sven
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9627566/
https://www.ncbi.nlm.nih.gov/pubmed/36260357
http://dx.doi.org/10.1021/acs.inorgchem.2c02835
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author Köstler, Benedikt
Jungwirth, Felix
Achenbach, Luisa
Sistani, Masiar
Bolte, Michael
Lerner, Hans-Wolfram
Albert, Philipp
Wagner, Matthias
Barth, Sven
author_facet Köstler, Benedikt
Jungwirth, Felix
Achenbach, Luisa
Sistani, Masiar
Bolte, Michael
Lerner, Hans-Wolfram
Albert, Philipp
Wagner, Matthias
Barth, Sven
author_sort Köstler, Benedikt
collection PubMed
description [Image: see text] A series of new mixed-substituted heteronuclear precursors with preformed Si–Ge bonds has been synthesized via a two-step synthesis protocol. The molecular sources combine convenient handling with sufficient thermal lability to provide access to group IV alloys with low carbon content. Differences in the molecule–material conversion by chemical vapor deposition (CVD) techniques are described and traced back to the molecular design. This study illustrates the possibility of tailoring the physical and chemical properties of single-source precursors for their application in the CVD of Si(1–x)Ge(x) coatings. Moreover, partial crystallization of the Si(1–x)Ge(x) has been achieved by Ga metal-supported CVD growth, which demonstrated the potential of the presented precursor class for the synthesis of crystalline group IV alloys.
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spelling pubmed-96275662022-11-03 Mixed-Substituted Single-Source Precursors for Si(1–x)Ge(x) Thin Film Deposition Köstler, Benedikt Jungwirth, Felix Achenbach, Luisa Sistani, Masiar Bolte, Michael Lerner, Hans-Wolfram Albert, Philipp Wagner, Matthias Barth, Sven Inorg Chem [Image: see text] A series of new mixed-substituted heteronuclear precursors with preformed Si–Ge bonds has been synthesized via a two-step synthesis protocol. The molecular sources combine convenient handling with sufficient thermal lability to provide access to group IV alloys with low carbon content. Differences in the molecule–material conversion by chemical vapor deposition (CVD) techniques are described and traced back to the molecular design. This study illustrates the possibility of tailoring the physical and chemical properties of single-source precursors for their application in the CVD of Si(1–x)Ge(x) coatings. Moreover, partial crystallization of the Si(1–x)Ge(x) has been achieved by Ga metal-supported CVD growth, which demonstrated the potential of the presented precursor class for the synthesis of crystalline group IV alloys. American Chemical Society 2022-10-19 2022-10-31 /pmc/articles/PMC9627566/ /pubmed/36260357 http://dx.doi.org/10.1021/acs.inorgchem.2c02835 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Köstler, Benedikt
Jungwirth, Felix
Achenbach, Luisa
Sistani, Masiar
Bolte, Michael
Lerner, Hans-Wolfram
Albert, Philipp
Wagner, Matthias
Barth, Sven
Mixed-Substituted Single-Source Precursors for Si(1–x)Ge(x) Thin Film Deposition
title Mixed-Substituted Single-Source Precursors for Si(1–x)Ge(x) Thin Film Deposition
title_full Mixed-Substituted Single-Source Precursors for Si(1–x)Ge(x) Thin Film Deposition
title_fullStr Mixed-Substituted Single-Source Precursors for Si(1–x)Ge(x) Thin Film Deposition
title_full_unstemmed Mixed-Substituted Single-Source Precursors for Si(1–x)Ge(x) Thin Film Deposition
title_short Mixed-Substituted Single-Source Precursors for Si(1–x)Ge(x) Thin Film Deposition
title_sort mixed-substituted single-source precursors for si(1–x)ge(x) thin film deposition
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9627566/
https://www.ncbi.nlm.nih.gov/pubmed/36260357
http://dx.doi.org/10.1021/acs.inorgchem.2c02835
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