Reconfiguring band-edge states and charge distribution of organic semiconductor–incorporated 2D perovskites via pressure gating

Two-dimensional (2D) semiconductor heterostructures are key building blocks for many electronic and optoelectronic devices. Reconfiguring the band-edge states and modulating their interplay with charge carriers at the interface in a continuous manner have long been sought yet are challenging. Here,...

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Detalles Bibliográficos
Autores principales: Guo, Songhao, Li, Yahui, Mao, Yuhong, Tao, Weijian, Bu, Kejun, Fu, Tonghuan, Zhao, Chang, Luo, Hui, Hu, Qingyang, Zhu, Haiming, Shi, Enzheng, Yang, Wenge, Dou, Letian, Lü, Xujie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2022
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9629702/
https://www.ncbi.nlm.nih.gov/pubmed/36322656
http://dx.doi.org/10.1126/sciadv.add1984

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9629702/
https://www.ncbi.nlm.nih.gov/pubmed/36322656
http://dx.doi.org/10.1126/sciadv.add1984

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