Effect of high-pressure D(2) and H(2) annealing on LFN properties in FD-SOI pTFET

Tunneling field-effect transistors (TFETs) are a promising candidate for the next generation of low-power devices, but their performance is very sensitive to traps near the tunneling junction. This study investigated the effects of high-pressure deuterium (D(2)) annealing and hydrogen (H(2)) anneali...

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Detalles Bibliográficos
Autores principales: Shin, Hyun-Jin, Eadi, Sunil Babu, An, Yeong-Jin, Ryu, Tae-Gyu, Kim, Do-woo, Lee, Hi-Deok, Kwon, Hyuk-Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9630275/
https://www.ncbi.nlm.nih.gov/pubmed/36323847
http://dx.doi.org/10.1038/s41598-022-22575-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9630275/
https://www.ncbi.nlm.nih.gov/pubmed/36323847
http://dx.doi.org/10.1038/s41598-022-22575-5

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