Cargando…
Effect of high-pressure D(2) and H(2) annealing on LFN properties in FD-SOI pTFET
Tunneling field-effect transistors (TFETs) are a promising candidate for the next generation of low-power devices, but their performance is very sensitive to traps near the tunneling junction. This study investigated the effects of high-pressure deuterium (D(2)) annealing and hydrogen (H(2)) anneali...
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9630275/ https://www.ncbi.nlm.nih.gov/pubmed/36323847 http://dx.doi.org/10.1038/s41598-022-22575-5 |