Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

[Image: see text] The heteroepitaxial growth of vertically aligned gallium nitride (GaN) single-crystalline microrod arrays on silicon substrates was achieved with high reproducibility by using the plasma-enhanced chemical vapor deposition (PECVD) method in the furnace. By reducing the plasma power...

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Detalles Bibliográficos
Autores principales: Chuang, Chun-Wei, Hong, Franklin Chau-Nan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9631740/
https://www.ncbi.nlm.nih.gov/pubmed/36340153
http://dx.doi.org/10.1021/acsomega.2c02204

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9631740/
https://www.ncbi.nlm.nih.gov/pubmed/36340153
http://dx.doi.org/10.1021/acsomega.2c02204

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