Defect free strain relaxation of microcrystals on mesoporous patterned silicon

A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowin...

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Detalles Bibliográficos
Autores principales: Heintz, Alexandre, Ilahi, Bouraoui, Pofelski, Alexandre, Botton, Gianluigi, Patriarche, Gilles, Barzaghi, Andrea, Fafard, Simon, Arès, Richard, Isella, Giovanni, Boucherif, Abderraouf
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9636155/
https://www.ncbi.nlm.nih.gov/pubmed/36333304
http://dx.doi.org/10.1038/s41467-022-34288-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9636155/
https://www.ncbi.nlm.nih.gov/pubmed/36333304
http://dx.doi.org/10.1038/s41467-022-34288-4

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