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Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation
4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expans...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9637098/ https://www.ncbi.nlm.nih.gov/pubmed/36335202 http://dx.doi.org/10.1038/s41598-022-23691-y |