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Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expans...

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Detalles Bibliográficos
Autores principales: Kato, Masashi, Watanabe, Ohga, Mii, Toshiki, Sakane, Hitoshi, Harada, Shunta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9637098/
https://www.ncbi.nlm.nih.gov/pubmed/36335202
http://dx.doi.org/10.1038/s41598-022-23691-y

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