Thermal property evaluation of a 2.5D integration method with device level microchannel direct cooling for a high-power GaN HEMT device

Gallium nitride high electron mobility transistor (GaN HEMT) devices have become critical components in the manufacturing of high-performance radio frequency (RF) or power electronic modules due to their superior characteristics, such as high electron saturation speeds and high power densities. Howe...

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Detalles Bibliográficos
Autores principales: Lian, Tingting, Xia, Yanming, Wang, Zhizheng, Yang, Xiaofeng, Fu, Zhiwei, Kong, Xin, Lin, Shuxun, Ma, Shenglin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9649738/
https://www.ncbi.nlm.nih.gov/pubmed/36389055
http://dx.doi.org/10.1038/s41378-022-00462-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9649738/
https://www.ncbi.nlm.nih.gov/pubmed/36389055
http://dx.doi.org/10.1038/s41378-022-00462-3

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