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Thermal property evaluation of a 2.5D integration method with device level microchannel direct cooling for a high-power GaN HEMT device
Gallium nitride high electron mobility transistor (GaN HEMT) devices have become critical components in the manufacturing of high-performance radio frequency (RF) or power electronic modules due to their superior characteristics, such as high electron saturation speeds and high power densities. Howe...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9649738/ https://www.ncbi.nlm.nih.gov/pubmed/36389055 http://dx.doi.org/10.1038/s41378-022-00462-3 |