Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and various functionalities. Therefore, it is urgent to understa...

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Detalles Bibliográficos
Autores principales: Kim, Donguk, Kim, Je-Hyuk, Choi, Woo Sik, Yang, Tae Jun, Jang, Jun Tae, Belmonte, Attilio, Rassoul, Nouredine, Subhechha, Subhali, Delhougne, Romain, Kar, Gouri Sankar, Lee, Wonsok, Cho, Min Hee, Ha, Daewon, Kim, Dae Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653482/
https://www.ncbi.nlm.nih.gov/pubmed/36371536
http://dx.doi.org/10.1038/s41598-022-23951-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653482/
https://www.ncbi.nlm.nih.gov/pubmed/36371536
http://dx.doi.org/10.1038/s41598-022-23951-x

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