Mesoscopic-scale grain formation in HfO(2)-based ferroelectric thin films and its impact on electrical characteristics

Ferroelectric memory devices are expected for low-power and high-speed memory applications. HfO(2)-based ferroelectric is attracting attention for its CMOS-compatibility and high scalability. Mesoscopic-scale grains, of which size is almost comparable to device size, are formed in HfO(2)-based ferro...

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Detalles Bibliográficos
Autores principales: Kobayashi, Masaharu, Wu, Jixuan, Sawabe, Yoshiki, Takuya, Saraya, Hiramoto, Toshiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2022
Materias:
Full Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653528/
https://www.ncbi.nlm.nih.gov/pubmed/36370230
http://dx.doi.org/10.1186/s40580-022-00342-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653528/
https://www.ncbi.nlm.nih.gov/pubmed/36370230
http://dx.doi.org/10.1186/s40580-022-00342-6

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