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Mesoscopic-scale grain formation in HfO(2)-based ferroelectric thin films and its impact on electrical characteristics
Ferroelectric memory devices are expected for low-power and high-speed memory applications. HfO(2)-based ferroelectric is attracting attention for its CMOS-compatibility and high scalability. Mesoscopic-scale grains, of which size is almost comparable to device size, are formed in HfO(2)-based ferro...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer Nature Singapore
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653528/ https://www.ncbi.nlm.nih.gov/pubmed/36370230 http://dx.doi.org/10.1186/s40580-022-00342-6 |