A Study of the Structural and Surface Morphology and Photoluminescence of Ni-Doped AlN Thin Films Grown by Co-Sputtering

Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure with a large band gap of 6.2 eV. AlN thin films have several potential applications and areas for study, particularly in optoelectronics. This research study focused on the preparation of Ni-doped Al...

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Detalles Bibliográficos
Autores principales: Khan, Mohsin, Nowsherwan, Ghazi Aman, Shah, Aqeel Ahmed, Riaz, Saira, Riaz, Muhammad, Chandio, Ali Dad, Shah, Abdul Karim, Channa, Iftikhar Ahmed, Hussain, Syed Sajjad, Ali, Rashid, Naseem, Shahzad, Shar, Muhammad Ali, Alhazaa, Abdulaziz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653990/
https://www.ncbi.nlm.nih.gov/pubmed/36364695
http://dx.doi.org/10.3390/nano12213919

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9653990/
https://www.ncbi.nlm.nih.gov/pubmed/36364695
http://dx.doi.org/10.3390/nano12213919

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