Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer

This paper reports an AlGaN-based ultraviolet-B light-emitting diode (UVB-LED) with a peak wavelength at 293 nm that was almost free of efficiency droop in the temperature range from 298 to 358 K. Its maximum external quantum efficiencies (EQEs), which were measured at a current density of 88.6 A cm...

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Detalles Bibliográficos
Autores principales: Lai, Mu-Jen, Chang, Yi-Tsung, Wang, Shu-Chang, Huang, Shiang-Fu, Liu, Rui-Sen, Zhang, Xiong, Chen, Lung-Chien, Lin, Ray-Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9654204/
https://www.ncbi.nlm.nih.gov/pubmed/36364421
http://dx.doi.org/10.3390/molecules27217596

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9654204/
https://www.ncbi.nlm.nih.gov/pubmed/36364421
http://dx.doi.org/10.3390/molecules27217596

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