High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility

Since the discovery of the quantum Hall effect in 1980, it has attracted intense interest in condensed matter physics and has led to a new type of metrological standard by utilizing the resistance quantum. Graphene, a true two-dimensional electron gas material, has demonstrated the half-integer quan...

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Detalles Bibliográficos
Autores principales: Zhou, Siyu, Zhu, Mengjian, Liu, Qiang, Xiao, Yang, Cui, Ziru, Guo, Chucai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9654316/
https://www.ncbi.nlm.nih.gov/pubmed/36364553
http://dx.doi.org/10.3390/nano12213777

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9654316/
https://www.ncbi.nlm.nih.gov/pubmed/36364553
http://dx.doi.org/10.3390/nano12213777

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