A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array

Nanorod array and planar green-emission InGaN/GaN multi-quantum well (MQW) LEDs were fabricated by lithography, nano-imprinting, and top–down etching technology. The defect-pinning effect of the nanostructure was found for the first time. The ratio of the bright regions to the global area in the pan...

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Detalles Bibliográficos
Autores principales: Zhan, Jinglin, Chen, Zhizhong, Deng, Chuhan, Jiao, Fei, Xi, Xin, Chen, Yiyong, Nie, Jingxin, Pan, Zuojian, Zhang, Haodong, Dong, Boyan, Kang, Xiangning, Wang, Qi, Tong, Yuzhen, Zhang, Guoyi, Shen, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9654749/
https://www.ncbi.nlm.nih.gov/pubmed/36364656
http://dx.doi.org/10.3390/nano12213880

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9654749/
https://www.ncbi.nlm.nih.gov/pubmed/36364656
http://dx.doi.org/10.3390/nano12213880

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