Cargando…

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array

Nanorod array and planar green-emission InGaN/GaN multi-quantum well (MQW) LEDs were fabricated by lithography, nano-imprinting, and top–down etching technology. The defect-pinning effect of the nanostructure was found for the first time. The ratio of the bright regions to the global area in the pan...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhan, Jinglin, Chen, Zhizhong, Deng, Chuhan, Jiao, Fei, Xi, Xin, Chen, Yiyong, Nie, Jingxin, Pan, Zuojian, Zhang, Haodong, Dong, Boyan, Kang, Xiangning, Wang, Qi, Tong, Yuzhen, Zhang, Guoyi, Shen, Bo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9654749/ https://www.ncbi.nlm.nih.gov/pubmed/36364656 http://dx.doi.org/10.3390/nano12213880

Ejemplares similares

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)

Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels
por: Li, Chengcheng, et al.
Publicado: (2019)

Study on the Coupling Mechanism of the Orthogonal Dipoles with Surface Plasmon in Green LED by Cathodoluminescence
por: Feng, Yulong, et al.
Publicado: (2018)

Study on Electron-Induced Surface Plasmon Coupling with Quantum Well Using a Perturbation Method
por: Chen, Yifan, et al.
Publicado: (2020)

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching
por: Chen, Lung-Chien, et al.
Publicado: (2017)

The effects of dynamic daylight-like light on the rhythm, cognition, and mood of irregular shift workers in closed environment
por: Nie, Jingxin, et al.
Publicado: (2021)

Recent Advances on GaN-Based Micro-LEDs
por: Zhang, Youwei, et al.
Publicado: (2023)

GaN nanorods grown on Si (111) substrates and exciton localization
por: Park, Young S, et al.
Publicado: (2011)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
por: Park, Youngsin, et al.
Publicado: (2018)

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
por: Avit, Geoffrey, et al.
Publicado: (2021)

Effect of dipole polarization orientation on surface plasmon coupling with green emitting quantum wells by cathodoluminescence
por: Feng, Yulong, et al.
Publicado: (2018)

Optimization of Ternary In(x)Ga(1-x)N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs
por: Lin, Yu-Chung, et al.
Publicado: (2023)

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED
por: Jeong, Hyun, et al.
Publicado: (2015)

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
por: Zhang, Lei, et al.
Publicado: (2014)

Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
por: Chen, Wei-Chun, et al.
Publicado: (2012)

Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs
por: Zhang, Ke, et al.
Publicado: (2020)

Graphene as a Transparent Conductive Electrode in GaN-Based LEDs
por: Zhang, Hehe, et al.
Publicado: (2022)

Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates
por: Tiagulskyi, Stanislav, et al.
Publicado: (2020)

Progress and Challenges of InGaN/GaN-Based Core–Shell Microrod LEDs
por: Meier, Johanna, et al.
Publicado: (2022)

Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges
por: Cheng, Ji, et al.
Publicado: (2017)

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
por: Shih, Huan-Yu, et al.
Publicado: (2015)

Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography
por: Wang, Sheng-Wen, et al.
Publicado: (2017)

State-of-the-art and prospects for intense red radiation from core–shell InGaN/GaN nanorods
por: Evropeitsev, Evgenii A., et al.
Publicado: (2020)

Improvement in the Output Power of Near-Ultraviolet LEDs of p-GaN Nanorods through SiO(2) Nanosphere Mask Lithography with the Dip-Coating Method
por: Yue, Wenkai, et al.
Publicado: (2021)

Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD
por: Sun, Xiaojuan, et al.
Publicado: (2012)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si
por: Ren, Fang, et al.
Publicado: (2018)

Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging
por: Kusch, Gunnar, et al.
Publicado: (2018)

An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits
por: Liu, Mengling, et al.
Publicado: (2018)

Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation
por: Zhu, Zhifang, et al.
Publicado: (2022)

Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods
por: Forsberg, Mathias, et al.
Publicado: (2017)

Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes
por: Lei, Po-Hsun, et al.
Publicado: (2021)

Precise Temperature Mapping of GaN-Based LEDs by Quantitative Infrared Micro-Thermography
por: Chang, Ki Soo, et al.
Publicado: (2012)

Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning
por: Rouet-Leduc, Bertrand, et al.
Publicado: (2016)

Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis
por: Jin, Xiaomin, et al.
Publicado: (2018)

GaN-based mini-LED matrix applied to multi-functional forward lighting
por: Nguyen, Quang-Khoi, et al.
Publicado: (2022)

Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure
por: Zhao, Xiaoyu, et al.
Publicado: (2021)

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
por: Jung, Byung Oh, et al.
Publicado: (2016)

3D fluorescence confocal microscopy of InGaN/GaN multiple quantum well nanorods from a light absorption perspective
por: Gu, Yan, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_bk286pj4pkv98quo9h9bii24hg