The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides

The applications of thin-film transistors (TFTs) based on oxide semiconductors are limited due to instability under negative bias illumination stress (NBIS). Here, we report TFTs based on solution-processed In(2)O(3) semiconductors doped with Pr(4+) or Tb(4+), which can effectively improve the NBIS...

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Detalles Bibliográficos
Autores principales: Lan, Linfeng, Ding, Chunchun, He, Penghui, Su, Huimin, Huang, Bo, Xu, Jintao, Zhang, Shuguang, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9655621/
https://www.ncbi.nlm.nih.gov/pubmed/36364678
http://dx.doi.org/10.3390/nano12213902

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9655621/
https://www.ncbi.nlm.nih.gov/pubmed/36364678
http://dx.doi.org/10.3390/nano12213902

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