Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process

Nitride film played an essential role as an excellent diffusion barrier in the semiconductor field for several decades. In addition, interest in next-generation memories induced researchers’ attention to nitride film as a new storage medium. A Pt/AlN/TaN device was investigated for resistive random-...

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Detalles Bibliográficos
Autores principales: Yang, Seyeong, Park, Jongmin, Cho, Youngboo, Lee, Yunseok, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656106/
https://www.ncbi.nlm.nih.gov/pubmed/36362036
http://dx.doi.org/10.3390/ijms232113249

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656106/
https://www.ncbi.nlm.nih.gov/pubmed/36362036
http://dx.doi.org/10.3390/ijms232113249

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