Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH(2)P Molecular Ion Implantation

Using a new implantation technique with multielement molecular ions consisting of carbon, hydrogen, and phosphorus, namely, CH(2)P molecular ions, we developed an epitaxial silicon wafer with proximity gettering sinks under the epitaxial silicon layer to improve the gettering capability for metallic...

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Detalles Bibliográficos
Autores principales: Kadono, Takeshi, Hirose, Ryo, Onaka-Masada, Ayumi, Kobayashi, Koji, Suzuki, Akihiro, Okuyama, Ryosuke, Koga, Yoshihiro, Fukuyama, Atsuhiko, Kurita, Kazunari
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656158/
https://www.ncbi.nlm.nih.gov/pubmed/36365955
http://dx.doi.org/10.3390/s22218258

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656158/
https://www.ncbi.nlm.nih.gov/pubmed/36365955
http://dx.doi.org/10.3390/s22218258

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