Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

The n-type Ce:ZnO (NL) grown using a hydrothermal method was deposited on a p-type boron-doped nanoleaf diamond (BDD) film to fabricate an n-Ce:ZnO NL/p-BDD heterojunction. It shows a significant enhancement in photoluminescence (PL) intensity and a more pronounced blue shift of the UV emission peak...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Qinglin, Yao, Yu, Sang, Xianhe, Zou, Liangrui, Ge, Shunhao, Wang, Xueting, Zhang, Dong, Wang, Qingru, Zhou, Huawei, Fan, Jianchao, Sang, Dandan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656198/
https://www.ncbi.nlm.nih.gov/pubmed/36364548
http://dx.doi.org/10.3390/nano12213773

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656198/
https://www.ncbi.nlm.nih.gov/pubmed/36364548
http://dx.doi.org/10.3390/nano12213773

Ejemplares similares