Resistive Switching Characteristics of Alloyed AlSiO(x) Insulator for Neuromorphic Devices

Charge-based memories, such as NAND flash and dynamic random-access memory (DRAM), have reached scaling limits and various next-generation memories are being studied to overcome their issues. Resistive random-access memory (RRAM) has advantages in structural scalability and long retention characteri...

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Detalles Bibliográficos
Autores principales: Lee, Yunseok, Jang, Jiung, Jeon, Beomki, Lee, Kisong, Chung, Daewon, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656227/
https://www.ncbi.nlm.nih.gov/pubmed/36363111
http://dx.doi.org/10.3390/ma15217520

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9656227/
https://www.ncbi.nlm.nih.gov/pubmed/36363111
http://dx.doi.org/10.3390/ma15217520

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