Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials

Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility. However, the performance of FETs based on 2D semiconductors has been limited by extrinsic f...

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Detalles Bibliográficos
Autores principales: Miao, Jialei, Zhang, Xiaowei, Tian, Ye, Zhao, Yuda
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9658022/
https://www.ncbi.nlm.nih.gov/pubmed/36364620
http://dx.doi.org/10.3390/nano12213845

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9658022/
https://www.ncbi.nlm.nih.gov/pubmed/36364620
http://dx.doi.org/10.3390/nano12213845

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