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Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials
Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility. However, the performance of FETs based on 2D semiconductors has been limited by extrinsic f...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9658022/ https://www.ncbi.nlm.nih.gov/pubmed/36364620 http://dx.doi.org/10.3390/nano12213845 |