Influence of Additive N(2) on O(2) Plasma Ashing Process in Inductively Coupled Plasma

One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N(2) gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen radicals measured OES. Howe...

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Detalles Bibliográficos
Autores principales: You, Ye-Bin, Lee, Young-Seok, Kim, Si-Jun, Cho, Chul-Hee, Seong, In-Ho, Jeong, Won-Nyoung, Choi, Min-Su, You, Shin-Jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9658516/
https://www.ncbi.nlm.nih.gov/pubmed/36364574
http://dx.doi.org/10.3390/nano12213798

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9658516/
https://www.ncbi.nlm.nih.gov/pubmed/36364574
http://dx.doi.org/10.3390/nano12213798

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